IEDM

07/13/2026

40% of presentations at IEDM are delivered by students.

Papers submitted by students are considered for the Roger A. Haken Best Student Paper Award.
Travel and registration support is available (You can request it at the time of submission).

Submission deadline: July 16, 2026.
Full call for papers at https://ieee-iedm.org/call-for-papers/overview/

Theme: Devices at the Heart of the Intelligence Revolution
Dec 12–16, 2026 | Hilton San Francisco Union Square

07/06/2026

IEDM 2026 invites submissions across 9 technical areas. Check where your research fits.

Full call for papers: https://ieee-iedm.org/call-for-papers/overview/

Devices at the Heart of the Intelligence Revolution
Dec 12–16, 2026 | Hilton San Francisco Union Square

06/29/2026

IEDM 2026 is now accepting paper submissions across 9 technical areas.
Submission deadline: July 16, 2026.

Full call for papers at: https://ieee-iedm.org/call-for-papers/overview/

Theme: Devices at the Heart of the Intelligence Revolution
Dec 12–16, 2026 | Hilton San Francisco Union Square

03/31/2026

coverage by Australia's Mirage News with an article on the KAIST paper on "smart gate" NAND Flash technology: "KAIST Boosts Storage with Smart Gate Tech"

From smartphones to large-scale AI servers, most digital information in modern society is stored in NAND flash memory*. KAIST researchers have developed an innovative technology that can overcome the limitations of next-generation semiconductors, where more data must be stored in smaller spaces. This advancement is expected to serve as a key enabling technology for realizing ultra-high-capacity memory.

From smartphones to large-scale AI servers, most digital information in modern society is stored in NAND flash memory*. KAIST researchers have

03/26/2026

coverage in the UK's Semiconductor Today with an article describing imec's 2D p-FETs presented at IEDM: "Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap"

SemiconductorToday2026(01)Feb

03/25/2026

coverage in SemiWiki with an article by Daniel Nenni on Samsung's STT-MRAM, "Advancing Automotive Memory: Development of an 8nm 128Mb Embedded STT-MRAM with Sub-ppm Reliability." The article describies "The World's First 8nm 128Mb STT-MRAM for Automotive Applications," a paper presented at IEDM 2025.

The rapid evolution of automotive technology has intensified the demand for highly reliable, high-performance semiconductor memory solutions.

03/24/2026

coverage in Semiconductor Engineering – "2D Semiconductors Inch Forward" by Katherine Derbyshire with an article on the Transition metal dichalcogenides (TMDs) and other 2D materials presented at IEDM.

Progress is steady, but fundamental questions remain.

03/23/2026

Registered attendees have access to OnDemand video content until March 31, 2026. Content includes all papers and video presentations, tutorials and Short Courses.
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03/10/2026

coverage by EE Times Japan's Akira Fukuda on TSMC's STCO chiplet technology – "STCO in Mini-Die (Chiplet) Interconnects"

「IEDM 2025」におけるTSMCの講演内容を紹介する。前回に続き、アウトラインの第3項「System-Technology Co-Optimization (STCO)（システム・製造協調最適化）」の内容を解説する。

01/07/2026

Registration for online access to technical content is open until January 31. Registered attendees will have access to OnDemand video content until March 31, 2026.

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