IEDM

coverage by Australia's Mirage News with an article on the KAIST paper on "smart gate" NAND Flash technology: "KAIST Boosts Storage with Smart Gate Tech"

From smartphones to large-scale AI servers, most digital information in modern society is stored in NAND flash memory*. KAIST researchers have developed an innovative technology that can overcome the limitations of next-generation semiconductors, where more data must be stored in smaller spaces. This advancement is expected to serve as a key enabling technology for realizing ultra-high-capacity memory.

KAIST Boosts Storage with Smart Gate Tech From smartphones to large-scale AI servers, most digital information in modern society is stored in NAND flash memory*. KAIST researchers have

coverage in the UK's Semiconductor Today with an article describing imec's 2D p-FETs presented at IEDM: "Imec presents record WSe2-based 2D-pFETs for extending logic technology roadmap"

SemiconductorToday2026(01)Feb SemiconductorToday2026(01)Feb

coverage in SemiWiki with an article by Daniel Nenni on Samsung's STT-MRAM, "Advancing Automotive Memory: Development of an 8nm 128Mb Embedded STT-MRAM with Sub-ppm Reliability." The article describies "The World's First 8nm 128Mb STT-MRAM for Automotive Applications," a paper presented at IEDM 2025.

Advancing Automotive Memory: Development of an 8nm 128Mb Embedded STT-MRAM with Sub-ppm Reliability The rapid evolution of automotive technology has intensified the demand for highly reliable, high-performance semiconductor memory solutions.

coverage in Semiconductor Engineering – "2D Semiconductors Inch Forward" by Katherine Derbyshire with an article on the Transition metal dichalcogenides (TMDs) and other 2D materials presented at IEDM.

2D Semiconductors Inch Forward Progress is steady, but fundamental questions remain.

Registered attendees have access to OnDemand video content until March 31, 2026. Content includes all papers and video presentations, tutorials and Short Courses.
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coverage by EE Times Japan's Akira Fukuda on TSMC's STCO chiplet technology – "STCO in Mini-Die (Chiplet) Interconnects"

ミニダイ（チップレット）間接続におけるSTCO 「IEDM 2025」におけるTSMCの講演内容を紹介する。前回に続き、アウトラインの第3項「System-Technology Co-Optimization (STCO)（システム・製造協調最適化）」の内容を解説する。

Registration for online access to technical content is open until January 31. Registered attendees will have access to OnDemand video content until March 31, 2026.

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71st Annual International Electron Devices Meeting You will be required to enter your email address that is associated with your IEEE membership, as well as your password. Registration Tip: Please clear your cache and/or open new incognito window before registering.

is officially over – Safe travels to all attendees and a happy holiday season!

Wednesday Session 43 – Bioelectronic Devices and Systems
This session includes 7 papers that describe the advances in the area of bioelectronic devices and systems. The first paper by Pan et al. demonstrates a novel NbSeVOx-based extended-gate FET for high-resolution sensing of cTnI, BNP, and NT-proBNP antibodies. This biosensor demonstrates a dynamic range exceeding 12 orders of magnitude. The second paper by Mei et al. presents a monolithically integrated array of highly-sensitive dual-gate IGZO thin-film transistors for parallel detection of multiple biomarkers. The third paper by Wang et al. demonstrates an ultra-large-scale low-temperature poly-silicon based active-matrix digital microfluidic chip. This system enables droplet actuation with a minimum volume of 1.2 nL. The fourth paper by Chaudhari et al. presents a wafer-scale fabrication of solid-state nanopores using extreme ultraviolet lithography, down to 10nm resolution. Their approach is validated through successful translocation of DNA molecules. The fifth paper by Shi et al. demonstrates a neuromorphic bio-signal processing system. The system utilizes dual-gate thin-film transistors and achieves 96% classification accuracy across four heartbeat signal classes. The sixth paper by Liu et al. presents biomolecule detection with aligned carbon nanotube FETs using a wafer-scale and high-throughput approach. The sensor shows a steep subthreshold swing less than 80 mV/dec. The seventh paper by Yao et al. demonstrates a high-performance dual-gate ion-sensitive ferroelectric FET using hafnia-zirconia on indium-oxide platform. The sensors achieves super-Nernstian sensitivity exceeding 1000 mV/PH.
https://iedm25.mapyourshow.com/8_0/sessions/session-details.cfm?scheduleid=37

Wednesday Session 42 – Advanced Image Sensors
This session includes 8 papers on the latest in image sensor technology. The first is an invited paper on progress in flash LiDAR using heterodyne detection. The next two papers present HDR imagers using LOFIC pixels that reach or exceed 120dB. This is followed by papers on specialty imagers, the first one describing an all-organic flexible imager, followed by an extremely high frame-rate burst CIS sensor. The final three papers of the session cover the latest technologies for shrinking pixels to sub-micron dimensions. Of special note is the last paper, which shrinks the dual-photodiode pixel to 0.7um.
https://iedm25.mapyourshow.com/8_0/sessions/session-details.cfm?scheduleid=36

Wednesday Focus Session 41 – Silicon Photonics for Energy Efficient AI Computing
This session brings together papers highlighting the progress of silicon photonics and heterogeneous integration for next-generation optical interconnects, covering polymer and Si waveguide-based CPO modules, modulators, photodetectors and integrated membrane lasers/EAMs, while also exploring optical switching, advanced optical routing approaches, integrated GeSnOI lasers and large-scale scalable photonic circuits for sustainable AI systems and enhanced connectivity.
https://iedm25.mapyourshow.com/8_0/sessions/session-details.cfm?scheduleid=35