GATE Enterprise

are designed using modern software and sophisticated hardware. We rely on reliability and miniaturization. Beginning in 2014, each product, prior to its introduction to the market, is tested by 50 independent beta-testers. Thanks to our long-term research, meticulous tests and our experience, our products are reliable and can operate under most harsh conditions. All products comply with ROHS 2 and meet CE standards. Electronic circuits are being made using modern technologies. SMD 0603 components and 8 mils traces are our standard. High-density multi-layer PCBs allow large scale miniaturization. In high power circuits, we use most powerful transistors available on market: HEXFET Power MOSFETs International Rectifier, NXP N-channel logic level MOSFET in LFPAK using NextPower technology, Vishay P-channel MOSFET in PowerPAK SO-8 using TrenchFET technology. Because of an optimised output capacitance, body diode and channel structure, MOSFETs exhibit “soft-recovery” switching behaviour, resulting in lower voltage spikes, faster decays and virtually no gate glitches. Moreover, increasing switching frequency from 300KHz to 1MHz allows a 70 - 80% reduction in inductor size. MOSFETs' excellent switching performance enables such design choices with minimal loss of efficiency. In GATE products, we introduced also LFPAK56. LFPAK uses a combined copper clip which is soldered in a single operation to the gate and source. This reduces spreading resistance, and gives LFPAK superior electrical and thermal characteristics as well as increased reliability. LFPAK56 – Automotive Qualified NXP Automotive Power MOSFETs are commonly deployed in many critical applications such as braking, power steering and engine management, where quality and reliability requirements are paramount. Thanks to the use of high quality components our products are reliable and able to work in hard conditions.