Functional nanomaterials & Interfaces Group - FNIG, IIT KGP

06/09/2024

Contribution from FNIG on the role of oxygen vacancies in tuning memristive properties of metal oxide thin films for memory and neuromorphic computing applications.

Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engi...

11/08/2024

FNIG demonstrates promising synaptic properties in oxygen vacancy controlled non-stoichiometric tungsten oxide thin films.

Neuromorphic Learning and Recognition in WO3-x Thin Film-based Forming-free Flexible Electronic Synapses, Archana Mohapatra, Chinmayee Mandar Mhaskar, Mousam Charan Sahu, Satyaprakash Sahoo, Ayan Roy Chaudhuri

26/10/2023

Congratulations Chinmayee for having received the prestigious Prime Minister's Research Fellowship (PMRF). Science Centre .

23/06/2022

Recent work from our group discusses the impact of epitaxial high-k dielectrics on the excitonic quasiparticles in monolayer MoSe2. This work is published in ACS Applied Nano Materials.

Monolayer (ML) transition-metal dichalcogenides (TMDCs) represent a novel class of materials for investigating excitonic quasiparticles in two dimensions and designing novel nanoscale optoelectronic devices. Practical application of the TMDC MLs requires their integration with appropriate substrates...

22/06/2022

Our recent published article in Advanced Electronic Materials discusses forming free, self compliant, multibit resistive switching properties in tungsten oxide thin films.

https://doi.org/10.1002/aelm.202200250

Forming-free, self-compliance, and multi-level characteristics are achieved from a W/WO3–x/Pt-based resistive switching device. The high oxygen vacancy concentration in the pristine oxide layer and t...

21/03/2022

Our recent published article in Nanoscale discusses highly efficient ethanol sensing properties of nitrogen doped In2O3/ZnO nanocomposite thin films.

Nanocomposite metal oxide thin films exhibit promising qualities in the field of gas sensors due to the opportunities provided by the heterointerface formation. In this work, we present the synthesis of nitrogen doped mesoporous In2O3–ZnO nanocomposite thin films by a simple wet chemical method us...

11/02/2022

Our recent work on ZnO thin film based ethanol sensor. Substitutional nitrogen doping in ZnO results in an efficient ethanol sensor. DFT calulation suggests that the microscopic origin of improved ethanol sensing of N-ZnO is related to the facile adsorption of ethanol molecules on the oxide surface which is promoted by nitrogen.

Zinc oxide which is a n-type semiconducting metal oxide (SMO) has been a promising material for detecting ethanol v***r. However, pure ZnO based ethan…

10/01/2022

Mini review article from FNIG on multiferroics for applications in flexible smart devices.

A great deal of interest has grown in both academia and industry toward flexible multiferroics in the recent years. The coupling of ferromagnetic properties with ferroelectric properties in multiferroic materials opens up many opportunities in applications such as magnetoelectric random access memor...

04/01/2022

Mr. Shihabudeen P. K. successfully defended (online) his PhD thesis entitled "Defect engineered metal oxide thin films for ethanol sensing" today (4.1.2022).
External examiner was Prof. Ch Subramanyam from IIT Hyderabad.

We wish Shihab all the very best for his future endeavors

17/11/2021

Another publication from FNIG through collaboration.

Light–matter coupling in van der Waal’s materials holds significant promise in realizing bosonic condensation and superfluidity. The underlying semiconductor’s crystal asymmetry, if any, can be utilized to form anisotropic half-light half-matter quasiparticles. We demonstrate generation of suc...